Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
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DOI：
10.1016/j.jcrysgro.2017.08.021
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发表时间：
2017-10
影响因子：
1.8
通讯作者：
J. Hartmann;F. Steib;Haosen Zhou;J. Ledig;Lars Nicolai;S. Fündling;T. Schimpke;A. Avramescu;T. Varghese;A. Trampert;M. Strassburg;H. Lugauer;H. Wehmann;A. Waag
中科院分区：
文献类型：
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作者：
J. Hartmann;F. Steib;Haosen Zhou;J. Ledig;Lars Nicolai;S. Fündling;T. Schimpke;A. Avramescu;T. Varghese;A. Trampert;M. Strassburg;H. Lugauer;H. Wehmann;A. Waag
