Direct Observation of Channel Structures in Zeolite Y and A with a Slow‐Scan, Charge‐Coupled‐Device Camera

Direct Observation of Channel Structures in Zeolite Y and A with a Slow‐Scan, Charge‐Coupled‐Device Camera
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使用慢扫描电荷耦合器件相机直接观察 Y 型和 A 型沸石中的通道结构

DOI:
10.1111/j.1151-2916.1995.tb08506.x
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发表时间:
1995
影响因子:
3.9
通讯作者:
A. Saji
A. Saji
中科院分区:
材料科学2区
文献类型:
--
作者:
Y. Sasaki;Toshiyuki Suzuki;Y. Ikuhara;A. Saji

文献摘要

被引文献

相似文献

沸石材料对电子束照射非常敏感。因此,使用高分辨率电子显微镜(HREM)来表征其结构的尝试非常有限。对电子束的敏感性很大程度上取决于沸石中的硅/铝比。慢扫描电荷耦合器件 (CCD) 相机提供了使用 HREM 以非常低的光束剂量观察材料的可能性。本研究应用该方法观察A型、Y型沸石等敏感材料,在剂量密度小于0. 2 A/cm2下记录HREM图像,没有受到电子辐照造成的任何损伤。研究发现,使用 HREM 和慢扫描 CCD 相机可以表征沸石中的精细通道结构、解理面和电子辐照过程。
Zeolite materials are very sensitive to electron beam irradiation. Therefore, there have been only limited attempts to characterize their structures using high-resolution electron microscopy (HREM). The sensitivity to the electron beam depends strongly on the Si/Al ratio in zeolites. A slow-scan, charge-coupled-device (CCD) camera provides the possibility to observe materials using HREM with very low beam doses. In this study, this method was applied to observe sensitive materials such as zeolite type A and type Y, and HREM images were recorded without any damage caused by electron irradiation under a dose density less than 0. 2 A /cm2. It was found that fine channel structures, cleavage planes, and the electron irradiation process in the zeolites could be characterized using HREM with the slow-scan CCD camera.