Simulation of OLEDs with a polar electron transport layer

Simulation of OLEDs with a polar electron transport layer
复制标题

DOI:
10.1016/j.orgel.2016.10.014
复制
发表时间:
2016-12-01
影响因子:
3.2
通讯作者:
Ruhstaller, B.
Ruhstaller, B.
中科院分区:
工程技术3区
文献类型:
--
作者:
Altazin, S.;Zufle, S.;Ruhstaller, B.

文献摘要

被引文献

相似文献

有机发光二极管(OLED)依赖于使用具有合适的能级和迁移率的功能材料,用于选择性电荷载流子注入和仅在相应电极处传输一种物质。然而,直到最近,许多有机半导体的偶极性质在这方面一直被忽视。特别是,电子传输层(ETL)往往表现出自发的取向极化,导致界面电荷,修改内的异质层device.here的电势景观,我们证明了极性ETL的效果可以使用公认的泊松和漂移扩散形式主义,如果考虑到这些界面电荷进行模拟。阻抗谱是用来验证我们的方法,并表征材料的极性。最后,模拟允许量化极性Ells对器件性能的影响。(C)© 2016 Elsevier B.V.版权所有。
Organic light-emitting diodes (OLEDs) rely on the use of functional materials with suitable energy levels and mobilities for selective charge carrier injection and transport of one species only at the respective electrode. Until recently, however, the dipolar nature of many organic semiconductors has been largely ignored in this context. In particular, electron transports layers (ETLs) often exhibit spontaneous orientation polarization leading to interfacial charges that modify the electrical potential landscape inside a hetero-layer device.Here we demonstrate that the effect of polar ETLs can be simulated using the well-established Poisson and drift-diffusion formalism, if these interfacial charges are taken into account. Impedance spectroscopy is used in order to validate our approach and to characterize the polarity of the material. Finally, simulations allow to quantify the impact of polar Ells on device performance. (C) 2016 Elsevier B.V. All rights reserved.