Two-Photon Microscopy for the Observation of Internal Defects in Semiconductor Crystals in Three-Dimensions
Two-Photon Microscopy for the Observation of Internal Defects in Semiconductor Crystals in Three-Dimensions
复制标题
用于三维半导体晶体内部缺陷观察的双光子显微镜
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Y. Kawata
中科院分区：
文献类型：
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作者：
Y. Kawata
本文提出了一种利用双光子过程对蓝光激光器用半导体晶体内部缺陷进行三维观察的方法。我们利用双光子过程激发光致发光。由于半导体材料在短波长区域具有固有的高吸收，因此光致发光的激发光主要被晶体吸收。很难观察到深区域中的缺陷。双光子激发可以克服这一限制，因为近红外光仅在聚焦点被吸收。激发光可以穿透到晶体的深层。我们成功地在ZnSe晶体中观察到了晶体表面以下200 μm处的缺陷。
We present a method of three-dimensional observation of internal defects in semiconductor crystals for blue lasers by use of two-photon process. We excite photoluminescence by using two-photon process. Since semiconductor materials have intrinsically high absorption in the short-wavelength region, the excitation light of photoluminescence is largely absorbed by the crystals. It is difficult to observe defects in deep regions. Two-photon excitation can overcome this limitation because near-infrared light is absorbed at only the focused point. The excitation light can penetrate into the deep retions of the crystal. We succeeded in observing defects in a ZnSe crystal 200 μm below the crystal surface.
影响因子：
56.9
作者：
DENK, W;STRICKLER, JH;WEBB, WW
通讯作者：
WEBB, WW