Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures.
Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures.
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DOI：
10.1103/physrevlett.91.036602
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发表时间：
2003-02
影响因子：
8.6
通讯作者：
J. Strand;B. Schultz;A. Isakovic;C. Palmstrøm;P. Crowell
中科院分区：
文献类型：
--
作者：
J. Strand;B. Schultz;A. Isakovic;C. Palmstrøm;P. Crowell
在面内小磁场（<500 Oe）下，Fe向Al_xGa_（1-x）As量子阱异质结构中的电自旋注入得到了证实。这种测量方法只对半导体中围绕内部磁场旋进的自旋分量敏感。该场比所施加的场大得多，并且强烈地依赖于注入电流密度。在自旋注入信号中观察到的滞后的细节再现在一个模型中，该模型结合了外延Fe膜的磁晶各向异性，自旋弛豫在半导体中，和注入的自旋的动态极化的核。
Electrical spin injection from Fe into AlxGa1-xAs quantum well heterostructures is demonstrated in small (<500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.