Nonlinear emission from an InGaAs/AlGaAs quantum-wire array
Nonlinear emission from an InGaAs/AlGaAs quantum-wire array
复制标题
InGaAs/AlGaAs 量子线阵列的非线性发射
DOI：
10.1088/0957-4484/16/8/044
复制
发表时间：
2005
期刊：
影响因子：
3.5
通讯作者：
M. Ogura
中科院分区：
文献类型：
--
作者：
Tae Geun Kim;C. Son;N. Tsurumachi;D. Oh;M. Ogura
研究了V型槽In0.2Ga0.8As/Al0.2Ga0.8As量子线（QWR）阵列的增益耦合分布反馈（GC-DFB）效应，并与GaAs/Al0.2Ga0.8As QWR阵列进行了比较。温度依赖的光致发光（PL）光谱的测量为两个样品，表明从量子阱的PL光谱是远远强于那些从量子威尔斯（QWs）在整个温度范围内。然后，采用一步金属有机化学气相沉积（MOCVD）法制备了InGaAs/AlGaAs QWR GC-DFB激光器，并对其进行了表征。结果表明，在阈值电流附近，沿分布反馈沿着方向的光反馈在发射光谱中表现出很强的非线性，表明V型槽InGaAs QWR阵列是一种很好的增益耦合分布反馈激光器。
Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In0.2Ga0.8As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.