RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films
RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films
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氢化非晶碳化硅薄膜的 RF-PECVD 沉积及其光学性能
DOI：
10.1016/j.ceramint.2014.02.067
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发表时间：
2014-08-01
影响因子：
5.2
通讯作者：
Shi, Wangzhou
中科院分区：
文献类型：
--
作者：
Chen, Enlong;Du, Guoping;Shi, Wangzhou
采用射频等离子体增强化学气相沉积（RF-PECVD）技术，以甲烷（CH 4）和硅烷（SiH 4）为反应气体，氢气（H2）为载气和稀释气体，制备了氢化非晶碳化硅（a-SiC，c：H）薄膜。系统研究了RF-PECVD沉积条件对a-SiCx：H薄膜光学性能和微结构特性的影响。当射频功率密度、沉积压力（P）和温度（T-s）一定时，a-SiCx：H薄膜的折射率（n）和生长速率随CH 4/SiH 4流量比（R）的增大而减小，光学带隙（4）随R的增大而增大。在较高R下生长的aSiC（x）：H薄膜比在较低R下生长的aSiC（x）：H薄膜更光滑。在射频功率密度、P和R一定的情况下，a-SiCx：H薄膜的生长速率随Ts的增大而减小，n随T的增大而增大。结果表明，随着温度的升高，薄膜的E-g略有增加，在较高的温度下，薄膜变得粗糙。当Ts、P和R一定时，a-SiCx：H薄膜的生长速率随RE功率密度的增加而增加，而薄膜的n值随RE功率密度的增加而略有增加，Eg值随RE功率密度的增加而略有下降。结果表明，稀土功率密度对a-SiCx：H薄膜的粗糙度有很大的影响。(C)2014 Elsevier Ltd和Techna Group S.r.l. All rights reserved.
Hydrogenated amorphous silicon carbide (a-Sic,c:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4) as reactive precursor gases and H-2 as a carrier and dilution gas. The effects of RF-PECVD deposition conditions on the optical properties and microstructural characteristics of a-SiCx:H thin films were systematically investigated. When the RF power density, deposition pressure (P) and temperature (T-s) were fixed, the refractive index (n) and the growth rate of a-SiCx:H thin films decreased with the CH4/SiH4 flow rate ratio (R), while their optical band gap (4) increased with R. The aSiC(x):H thin film grown at higher R was found to be smoother than that grown at lower R. When the RF power density, P and R were fixed, the growth rate of a-SiCx:H thin films decreased with Ts, while their n increased with T. It was found that E-g slightly increased with Ts, and the film became rough at higher T. When Ts, P and R were fixed, the growth rate of a-SiCx:H thin films increased with the RE power density, while their n only slightly increased and Eg slightly decreased with the RE power density. It was found that the RE power density had a large impact on the roughness of a-SiCx:H thin films. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.