Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow

Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow
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DOI：
10.1109/iedm.2007.4419041
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发表时间：
2007-12
期刊：
2007 IEEE International Electron Devices Meeting
影响因子：
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通讯作者：
T. Takahashi;T. Nishimura;L. Chen;S. Sakata;K. Kita;A. Toriumi
T. Takahashi;T. Nishimura;L. Chen;S. Sakata;K. Kita;A. Toriumi
中科院分区：
其他
文献类型：
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作者：
T. Takahashi;T. Nishimura;L. Chen;S. Sakata;K. Kita;A. Toriumi

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通过抑制GeO脱附和用自由基氮处理Ge表面，GeO_2/Ge和高k（LaO_3）/Ge界面得到了显著改善。采用亲锗材料的选择和界面敏感的工艺流程，在FUSI/GeO_2/Ge中实现了PtGe源/漏p-MOSFET的峰值空穴迁移率约为370 cm ~ 2/Vsec。在金属和Ge之间插入超薄GeOx层，实现了金属/n-Ge欧姆特性，首次实现了金属源/漏Ge n-MOSFET。
GeO2/Ge and high-k(LaYO3)/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge- intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm2/Vsec in FUSI/GeO2/Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved by inserting ultra-thin GeOx layer between metal and Ge, which enables us to operate metal source/drain Ge n-MOSFETs for the first time.