The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition
The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition
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DOI:
10.1016/j.tsf.2006.11.156
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发表时间:
2007-07
期刊:
影响因子:
2.1
通讯作者:
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler
中科院分区:
文献类型:
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作者:
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler