The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition

The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition
复制标题

DOI:
10.1016/j.tsf.2006.11.156
复制
发表时间:
2007-07
期刊:
影响因子:
2.1
通讯作者:
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler
中科院分区:
材料科学3区
文献类型:
--
作者:
W. Soppe;C. Devilée;M. Geusebroek;J. Loffler;H. Muffler

文献摘要

被引文献

相似文献