Synthesis of transfer-free graphene films on dielectric substrates with controllable thickness via an in-situ co-deposition method for electrochromic devices
Synthesis of transfer-free graphene films on dielectric substrates with controllable thickness via an in-situ co-deposition method for electrochromic devices
复制标题
通过原位共沉积方法在介电基板上合成厚度可控的无转移石墨烯薄膜用于电致变色器件
DOI:
10.1016/j.ceramint.2022.04.156
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发表时间:
2022
影响因子:
5.2
通讯作者:
Gao Tenghua
中科院分区:
文献类型:
--
作者:
Zhang Chitengfei;Cai Yilun;Guo Le;Tu Rong;Zheng Yingqiu;Li Bao-Wen;Zhang Song;Gao Tenghua
The solutions and polymer supported materials in graphene transfer process would introduce lots of containments, defects and wrinkles, which weakens the performance of graphene. Herein, an in-situ co-deposition method is carried out to obtain transfer-free graphene films with controllable thickness on several dielectric substrates. The amorphous carbon (carbon source) and copper (catalyst) are co-deposited on dielectric substrates. Followed by an in-situ annealing process, the amorphous carbon is transformed to few-layer graphene. High co-deposition temperature could promote the decomposition of Cu(acac)2precursors, leading to the controllable thickness of amorphous carbon layer in Cu@C films. Finally, 3-, 5-, 8- and 10- layers graphene films with transmittance of up to 93.5% and square resistance of 0.8 kΩ·sq−1are obtained and a high-performance electrochromic device is fabricated using 3 layers graphene films as electrodes. The “color” and “bleach” time of the electrochromic device is 16.6 s and 6.8 s with the transmittance of 26.8% and 79.7% separately. This method paves an alternative way for the batch production of transfer-free graphene film as electrode materials.