High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride
High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride
复制标题
基于少层六方氮化硼的高性能深紫外光电探测器
DOI：
10.1039/c7nr09438h
复制
发表时间：
2018-03-28
期刊：
影响因子：
6.7
通讯作者：
Jin, Peng
中科院分区：
文献类型：
--
作者：
Liu, Heng;Meng, Junhua;Jin, Peng
石墨烯的同晶相结构--六方氮化硼（h-BN），由于其在新型石墨烯基器件中作为超平衬底或栅介质层的潜在应用，引起了人们极大的关注。此外，h-BN具有宽禁带和高吸收系数等优异的物理性能，是一种很有前途的深紫外光电子材料。采用离子束溅射沉积法在Cu衬底上制备了具有可控层数的二维h-BN薄膜，并在SiO2/Si衬底上制备了具有可控层数的二维h-BN薄膜深紫外探测器。在较高的衬底温度下合成的h-BN层具有较低的畴界密度和较高的结晶质量，并且基于3 nm h-BN层的光电探测器在212 nm的DUV光照射下表现出高性能，开/关比>10（3），截止波长约为225 nm。这项工作表明，二维h-BN层是有前途的高性能的太阳盲光电探测器的建设。
Hexagonal boron nitride (h-BN), an isomorph of graphene, has attracted great attention owing to its potential applications as an ultra-flat substrate or gate dielectric layer in novel graphene-based devices. Besides, h-BN appears to be a promising material for deep ultraviolet (DUV) optoelectronic applications because of its extraordinary physical properties, such as wide band gap and high absorption coefficient. In this work, two-dimensional h-BN with controllable layers was synthesized on Cu foils by ion beam sputtering deposition, and DUV photodetectors were fabricated from the transferred h-BN layers on SiO2/Si substrates. The h-BN layers synthesized at the higher substrate temperature possess a lower density of domain boundaries and higher crystalline quality, and the photodetectors based on a 3 nm h-BN layer exhibited high performance with an on/off ratio of >10(3) under DUV light illumination at 212 nm and a cutoff wavelength at around 225 nm. This work demonstrates that two-dimensional h-BN layers are promising for the construction of high-performance solar-blind photodetectors.