Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
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GaN 到 SiC 的电子注入以及 GaN/SiC 异质结双极晶体管的制造
DOI：
10.4028/www.scientific.net/msf.527-529.1545
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Kimoto
中科院分区：
文献类型：
--
作者：
J. Suda;Y. Nakano;S. Shimada;Koichi Amari;T. Kimoto
介绍了n+-GaN/p--SiC和n+-GaN/p+-SiC异质结的表征以及使用这些异质结制造GaN/SiC异质结双极晶体管（HBT）。在正向偏压下，n+-GaN/p+-SiC异质结二极管的电致发光光谱清楚地表明了电子从n+-GaN注入到p+-SiC中。制备了n+-GaN发射极/p+-SiC基极/n−-SiC集电极/n+-SiC衬底的HBT。虽然获得了清晰的共基极特性，但电流增益非常低（10-4）。使用相同基极-集电极结的SiC同质结双极结晶体管（BJT）表现出0.5的电流增益值，表明GaN/SiC HBT的低电流增益源于低发射极效率。
Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.