Synthesis of Si3N4 whiskers in porous SiC bodies
Synthesis of Si3N4 whiskers in porous SiC bodies
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DOI：
10.1016/j.matlet.2007.03.063
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发表时间：
2007-10
影响因子：
3
通讯作者：
Ingo Jung;Sun-Hee Cho;S. Na;Jaehyung Lee;H. Lee;W. Cho
中科院分区：
文献类型：
--
作者：
Ingo Jung;Sun-Hee Cho;S. Na;Jaehyung Lee;H. Lee;W. Cho
采用碳热还原法制备了Si3N4晶须。制备的Si3N4晶须的原料为Si3N4、SiO2和Si的粉末混合物(硅)和酚醛树脂(碳)的混合物。钴被用作金属催化剂。碳热反应在1400℃或1500℃下进行1~2小时，α-Si3N4晶须在碳化硅气孔内生长，其直径在0.1~1.0μm之间，生长的Si3N4晶须的长度超过100μm，生长方向为[100]。
Si3N4whiskers were synthesized by the carbothermal reduction process in porous SiC bodies. The SiC bodies had a sponge microstructure with pore sizes of approximately 600 μm. The raw materials for the Si3N4whiskers were powder mixtures of Si3N4, SiO2and Si for silicon and phenolic resin for carbon. Cobalt was used as a metal catalyst. The carbothermal reaction was performed at 1400 °C or 1500 °C for 1 or 2 h. The α-Si3N4whiskers grew inside the SiC pores by the VLS process, and their diameters ranged from 0.1 to 1.0 μm. The length of the grown Si3N4whiskers was over 100 μm and their growth direction was [100].