Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly
Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly
复制标题
通过自组装有机铁电纳米片阵列制成灵活、坚固、高密度的 FeRAM
DOI：
10.1002/advs.201801931
复制
发表时间：
2019-03-20
期刊：
影响因子：
15.1
通讯作者：
Shen, Yang
中科院分区：
文献类型：
--
作者：
Guo, Mengfan;Jiang, Jianyong;Shen, Yang
铁电存储器通过纳米结构设计获得了高的数据存储密度，但同时也降低了存储器的鲁棒性。对于柔性存储器所青睐的有机铁电体，低居里转变温度限制了它们的热稳定性。在此，铁电随机存取存储器（FeRAM）的基础上，通过自组装的P（VDF-TrFE）laminates的阵列被证明。书面数据显示，增强的耐热性高达90摄氏度，并经历了12个热循环之间的30和80摄氏度，几乎没有挥发。提高的热稳定性归因于钉扎效应在晶界和层状之间的界面，在带电畴壁和带电缺陷耦合。这些结果为提高有机柔性FeRAM的鲁棒性提供了一种策略，并揭示了铁电聚合物不同相之间的吸引耦合效应。
Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability. Herein, a ferroelectric random access memory (FeRAM) is demonstrated based on an array of P(VDF-TrFE) lamellae by self-assembly. Written data shows enhanced thermal endurance up to 90 degrees C and undergoes 12 thermal cycles between 30 and 80 degrees C with little volatilization. The promoted thermal stability is attributed to pinning effect at interfaces between grain boundaries and lamellae, where charged domain walls and charged defects are coupled. These results provide a strategy for improving robustness of organic flexible FeRAMs, and reveal an attracting coupling effect between different phases of ferroelectric polymer.