Thermoelectric Properties of Some Cerium Sulfide Semiconductors from 4° to 1300°K
Thermoelectric Properties of Some Cerium Sulfide Semiconductors from 4° to 1300°K
复制标题
某些硫化铈半导体在 4° 至 1300°K 范围内的热电性能
DOI：
10.1063/1.1777182
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发表时间：
1962
影响因子：
3.2
通讯作者：
R. Miller
中科院分区：
文献类型：
--
作者：
F. Ryan;I. N. Greenberg;F. L. Carter;R. Miller
测量了一系列具有磷化钍结构的硫化铈化合物的热导率、塞贝克系数和电阻率。化合物的组成范围为CeSx（1.33 ≤ x ≤ 1.5），并在掺杂和不掺杂硫化锶的情况下制备。所有样品的电阻率和塞贝克系数随温度增加，外观上类似于金属的温度依赖性。硫化锶加入到（x > 1.33）的组合物中通常导致电阻率和塞贝克系数的降低，同时保持相同的温度依赖性。热电的“品质因数”给出的样品之一，并在系统中的传导机制作出一些评论。
The thermal conductivity, Seebeck coefficient, and resistivity were measured for a series of sintered cerium sulfide compounds of the thorium phosphide structure. The compounds were in the composition range CeSx (1.33 ≤ x ≤ 1.5) and were prepared with and without strontium sulfide doping. The electrical resistivity and Seebeck coefficient increased with temperature for all samples, similar in appearance to the temperature dependency of a metal. The addition of strontium sulfide to compositions for (x > 1.33) usually led to a decrease in the resistivity and Seebeck coefficient while maintaining the same temperature dependence. The thermoelectric ``figure of merit'' is given for one of the samples and some remarks are made on the conduction mechanism in the system.