Germanium for silicon photonics
Germanium for silicon photonics
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DOI：
10.1016/j.tsf.2009.10.062
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发表时间：
2010-01-01
期刊：
影响因子：
2.1
通讯作者：
Wada, Kazumi
中科院分区：
文献类型：
--
作者：
Ishikawa, Yasuhiko;Wada, Kazumi
本文描述了Ge在硅平台上集成有源光子器件方面起到的使能作用。尽管Ge和Si之间存在较大的晶格失配(约4%)，但通过超高真空化学气相沉积技术可以在Si上外延生长高质量的Ge层。描述了Ge层在近红外有源光子器件，即光电二极管、光调制器和光发射器中的应用。讨论了器件物理以及与硅电子学集成的几个问题。(C)2009爱思唯尔B.V.保留所有权利。
This paper describes that Ge plays an enabler to integrate active photonic devices on a Si platform. In spite of the large lattice mismatch of similar to 4% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared active photonic devices, i.e., photodiodes, optical modulators and light emitters, are described. Several issues on the device physics as well as the integration with Si electronics are discussed. (C) 2009 Elsevier B.V. All rights reserved.