Photoyield and x-ray-photoelectron spectroscopic studies of O2-annealing effects on SrBi2Ta2O9 thin films prepared by pulsed laser deposition
Photoyield and x-ray-photoelectron spectroscopic studies of O2-annealing effects on SrBi2Ta2O9 thin films prepared by pulsed laser deposition
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脉冲激光沉积制备的 SrBi2Ta2O9 薄膜 O2 退火效应的光产率和 X 射线光电子能谱研究
DOI：
10.1063/1.1592009
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发表时间：
2003
影响因子：
3.2
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
Masao Takahashi;M. Noda;M. Okuyama
用紫外光产额谱(Pys)和X射线光电子能谱(XPS)研究了不同类型的SrBi2Ta2O9(SBT)薄膜的电学性质。UV-Pys研究表明，氧气退火使脉冲激光沉积(PLD)制备的SBT薄膜表面的费米能级增加了约0.34 eV，而用金属有机分解(MOD)方法制备的其他SBT薄膜的费米能级与氧退火后的PLD-SBT薄膜几乎相同。对这些SBT薄膜的XPS研究表明，PLD-SBT薄膜比MOD-SBT薄膜更容易被Ar+轰击还原。这意味着PLD-SBT薄膜比MOD-SBT薄膜包含更多的缺陷(Bi2O2)2+层。氧退火对PLD-SBT薄膜的影响被认为是氧化PLD-SBT表面的缺陷(Bi2O2)2+层，并使表面费米能级向禁带中心移动。
Electronic properties of various SrBi2Ta2O9 (SBT) thin films were studied by ultraviolet (UV)-ray photoyield spectroscopy (PYS) and x-ray photoelectron spectroscopy (XPS). The UV-PYS studies have shown that O2 annealing increases the Fermi level in the SBT thin film surface which was prepared by pulsed laser deposition (PLD) by about 0.34 eV, while the other SBT thin films deposited by metalorganic decomposition (MOD) have shown almost the same Fermi levels as the O2-annealed PLD-SBT thin film. The XPS studies of those SBT thin films have shown that the PLD-SBT thin film is more susceptible to deoxidization by Ar+ bombardment than MOD-SBT thin films. This implies that the PLD-SBT thin film includes more defective (Bi2O2)2+ layers than MOD-SBT thin films. The O2-annealing effects on the PLD-SBT thin films are thought to oxidize defective (Bi2O2)2+ layers on the PLD-SBT surface and to shift the surface Fermi level towards the center of the band gap.