Sintering characteristics, crystal structure, and microwave dielectric properties of Ce2[Zr1-x(Al1/2Nb1/2)x]3(MoO4)9 ceramics
Sintering characteristics, crystal structure, and microwave dielectric properties of Ce2[Zr1-x(Al1/2Nb1/2)x]3(MoO4)9 ceramics
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Ce2[Zr1-(Al1/2Nb1/2)]3(MoO4)9陶瓷的烧结特性、晶体结构及微波介电性能
DOI：
10.1016/j.jallcom.2022.166566
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发表时间：
2022-08-09
影响因子：
6.2
通讯作者：
Yue, Zhenxing
中科院分区：
文献类型：
--
作者：
Bao, Jian;Wang, Yingzi;Yue, Zhenxing
本文采用固相法制备了新型Ce2[Zr1-x(a1 / 2nb1 /2)x]3(MoO4)9 (CZ1-x(AN)xM) （x = 0.02-0.10）微波介质陶瓷。CZ1-x(AN)xM陶瓷具有低介电常数、超低介电损耗、谐振频率温度系数接近于零的特点，适用于5g技术。系统研究了（Al1/2Nb1/2）4+取代Zr4+对Ce2Zr3(MoO4)9 （CZM）陶瓷烧结特性、晶体结构和微波介电性能的影响。在这项工作中，根据x射线衍射图，CZ1-x(AN)xM可以在整个掺杂范围内形成纯晶体结构。通过Rietveld细化分析确定了陶瓷的晶胞参数。利用扫描电镜研究了在最佳烧结温度下烧结的CZ1-x(AN)xM的表面形貌。利用P-V-L理论对陶瓷的内部参数进行了计算和分析。理论损耗通过红外反射光谱仪得到。当x = 0.04，烧结温度为850℃时，获得了最佳性能，epsilon r = 10.54, Q f = 91,476 GHz（在9.55 GHz时），tau f = - 8.95 ppm/℃。本工作研究了晶格振动与微波介电性能的关系，并从化学键的角度探讨了离子掺杂对微波介电性能的影响，为相关研究奠定了理论基础。(c) 2022 Elsevier B.V.版权所有
This work prepared a new type of Ce2[Zr1-x(Al1/2Nb1/2)x]3(MoO4)9 (CZ1-x(AN)xM) (x = 0.02-0.10) microwave dielectric ceramics through the solid-phase process. CZ1-x(AN)xM ceramics exhibited low dielectric con-stant, ultra-low dielectric loss, and near-zero resonant frequency temperature coefficient, which is suitable for 5 G technology. The effects of (Al1/2Nb1/2)4+replacing Zr4+on the sintering characteristics, crystal structure, and microwave dielectric properties of Ce2Zr3(MoO4)9 (CZM) ceramics were studied system-atically. In this work, CZ1-x(AN)xM could form a pure crystal structure in the whole doping range according to the X-ray diffraction pattern. The crystal cell parameters of the ceramics were confirmed by Rietveld refinement analysis. Furthermore, the surface morphology of CZ1-x(AN)xM sintered at the optimum sin-tering temperature was studied by scanning electron microscopy. Some internal parameters of the ceramics were calculated and analyzed by employing the P-V-L theory. The theoretical loss was acquired by em-ploying an infrared reflection spectrometer. When x was 0.04 and the sintering temperature was 850 degrees C, the best properties were achieved, including epsilon r = 10.54, Q f = 91,476 GHz (at 9.55 GHz), and tau f = - 8.95 ppm/degrees C. This work studied the relationship between lattice vibration and microwave dielectric properties and discussed the influence of ion doping on microwave dielectric properties from the perspective of chemical bonds, laying a theoretical foundation for related research. (c) 2022 Elsevier B.V. All rights reserved.