Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS 2 device arrays
Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS 2 device arrays
复制标题
喷墨定义的位点选择性 (IDSS) 生长，用于平面内和平面外 MoS 2 器件阵列的可控生产
DOI：
10.1039/d0nr04012f
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发表时间：
2020
期刊：
影响因子：
6.7
通讯作者：
Liang, Xiaogan
中科院分区：
文献类型：
--
作者：
Ryu, Byunghoon;Yoon, Jeong Seop;Kazyak, Eric;Chen, Kuan-Hung;Park, Younggeun;Dasgupta, Neil P.;Liang, Xiaogan
随着人们对二硫化钼作为一种有前途的电子材料越来越感兴趣，对与该材料和其他相关层状材料兼容的纳米制造技术的需求也越来越大。此外，开发能够直接生产MoS2器件阵列的可扩展纳米制造方法是加快各种功能MoS2基器件的设计和商业化的当务之急。所需的制造方法需要满足两个关键要求。首先，他们应该最大限度地减少基于抗蚀剂的光刻和等离子刻蚀工艺的参与，这些工艺会给MoS2结构带来不可去除的污染物。其次，他们应该能够以受控的方式生产具有面内或面外边缘的MoS2结构，这是提高MoS2在各种设备应用中的可用性的关键。在这里，我们介绍一种喷墨定义的位置选择(IDSS)方法，以满足这些要求。IDSS包括两个主要步骤：(I)喷墨打印定义MoS2生长的指定位置的微型液滴，以及(Ii)在液滴定义的位置选择性生长MoS2。此外，IDSS还能够生成不同结构的MoS2。具体地说，使用去离子(DI)水滴的IDSS工艺主要产生面内MoS2特征，而使用石墨烯墨滴的工艺主要产生富含暴露边缘的面外MoS2特征。利用平面外MoS_2结构，我们成功地制备了具有可逆锂/脱锂能力的小型化片上锂离子电池。这种IDSS方法可以进一步扩展为一种可扩展的、可靠的纳米制造方法，用于制造小型化的片上储能设备。
Along with the increasing interest in MoS2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS2 device arrays is an imperative task to speed up the design and commercialize various functional MoS2-based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS2 structures. Second, they should be able to produce MoS2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS2 growth, and (ii) site-selective growth of MoS2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS2 features, whereas the processes using graphene ink droplets mainly produce out-of-plane MoS2 features rich in exposed edges. Using out-of-plane MoS2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.