R-curve behavior in a silicon carbide whisker/alumina matrix composite

R-curve behavior in a silicon carbide whisker/alumina matrix composite
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DOI:
10.1111/j.1151-2916.1990.tb05267.x
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发表时间:
1990-07
影响因子:
3.9
通讯作者:
J. Homeny;W. L. Vaughn
J. Homeny;W. L. Vaughn
中科院分区:
材料科学2区
文献类型:
--
作者:
J. Homeny;W. L. Vaughn

文献摘要

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R 曲线测量是在 SiC 晶须/al{sub 2}O{sub 3} 基体复合材料上进行的。利用受控缺陷/强度技术来确定作为裂纹扩展函数的抗断裂性。观察到随裂纹扩展增加而上升的 R 曲线行为,证实了尾流增韧效应对裂纹扩展阻力的作用。对裂纹/微观结构相互作用的观察表明,裂纹尾流中完整晶须的桥接是导致 R 曲线行为上升的机制。
R-curve measurements were performed on a SiC whisker/al{sub 2}O{sub 3} matrix composite. A controlled flaw/strength technique was utilized to determine fracture resistance as a function of crack extension. Rising R-curve behavior with increasing crack extension was observed, confirming the operation of wake toughening effects on the crack growth resistance. Observations of crack/microstructure interactions reveal that bridging by intact whiskers in the crack wake was the mechanism responsible for the rising R-curve behavior.