TI-SI-N FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
TI-SI-N FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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DOI：
10.1007/bf01447027
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发表时间：
1992-09-01
影响因子：
3.6
通讯作者：
PENG, HR
中科院分区：
文献类型：
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作者：
LI, SZ;SHI, YL;PENG, HR
采用等离子体增强化学气相沉积技术，在560℃的高温下在高速钢衬底上沉积了Ti-Si-N薄膜。使用的原料气体为TiCl4、SiCl4、N2和H-2。通过调节原料气中氯化物的混合比例，可以很好地控制薄膜的成分，薄膜中的硅含量在0~40at之间变化。%。结果表明，在TiN薄膜中添加少量的Si可以显著改善TiN薄膜的形貌，呈现出致密的玻璃状结构。同时，薄膜和衬底之间的界面也更加光滑和均匀。Ti-Si-N薄膜含10-15at.%Si薄膜的最大显微硬度约为6350kgf/mm2，远高于TiN薄膜。
Ti-Si-N thin films were deposited on HSS substrates at 560-degrees-C using plasma-enhanced chemical vapor deposition. Feed gases used were TiCl4, SiCl4, N2, and H-2. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases, The Si content in the film varied in the range of 0 to 40 at. %. It was found that a small addition of Si to a TiN film improved the morphology significantly, showing dense and glass like structure. Also a much smoother and more homogeneous interface between the film and the substrate was obtained. The Ti-Si-N films containing 10-15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm2, much higher than that of TiN films.