Review on analog/radio frequency performance of advanced silicon MOSFETs
Review on analog/radio frequency performance of advanced silicon MOSFETs
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先进硅MOSFET的模拟/射频性能综述
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Raskin
中科院分区：
文献类型：
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作者：
V. Passi;J. Raskin
金属氧化物半导体场效应晶体管（MOSFET）栅极长度的大幅缩小一直是集成电路产业增长的主要刺激因素。这种降尺度已被证明对数字电路是有益的，主要是由于需要改进电路性能和降低成本，并导致载波通过信道的传输时间大大减少，从而产生非常高的截止频率。直到最近几十年，互补金属氧化物半导体（CMOS）场效应晶体管（FET）才被认为是射频技术的选择。本文综述了硅基场效应管的数字、模拟和射频性能指标（FoM）的现状。最新的器件具有非常好的性能，表现为低漏极势垒降低值、亚阈值摆幅、高栅极跨导值、早期电压、截止频率、低最小噪声系数和良好的低频噪声特征值。还显示了这些FoM对器件栅极长度的依赖关系，帮助读者了解更短CMOS节点所面临的趋势和挑战。器件性能助推器包括绝缘体上硅衬底、多栅极结构、应变工程、超薄体和埋藏氧化物以及III-V和2D材料，讨论了受这些助推器影响的晶体管特性。对延续摩尔定律的两个主要竞争者——超薄体埋式氧化物晶体管和翅片场效应晶体管进行了简要的比较。作者想提到的是，尽管在半导体行业进行了广泛的研究，硅基MOSFET在可预见的未来将继续成为驱动力。
Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.