Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si
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DOI：
10.1364/oe.25.003927
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发表时间：
2017-02-20
期刊：
影响因子：
3.8
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Norman, Justin;Kennedy, M. J.;Bowers, John E.
可扩展的数据中心互连技术需要同轴（001）Si上的高性能III-V族激光器，其波长为通信和电信波长。我们演示了在[110]方向上具有{111} V形槽的同轴（001）Si上生长的电注入量子点激光器。不使用额外的Ge缓冲层或衬底误切。有源区由五个InAs/InGaAs阱中点层组成。我们实现了阈值低至36 mA、工作温度高达80摄氏度的连续激光输出。(C)2017美国光学学会
High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80 degrees C. (C) 2017 Optical Society of America