Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H 2 O Vapor Heat Treatment
Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H 2 O Vapor Heat Treatment
复制标题
通过感应耦合远程氧等离子体与高压 H 2 O 蒸气热处理相结合形成氧化硅薄膜来钝化硅表面
DOI：
10.1557/opl.2012.863
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T. Sameshima
中科院分区：
文献类型：
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作者：
Hiroaki Abe;S. Yoshidomi;Y. Nagatomi;M. Hasumi;T. Sameshima
