Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4
Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4
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载流子浓度调节和高能带简并相结合增强 Cu3SbSe4 的热电性能
DOI：
10.1021/acsami.7b08121
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发表时间：
2017
影响因子：
9.5
通讯作者：
Hou Jingdi
中科院分区：
文献类型：
--
作者：
Zhang Dan;Yang Junyou;Jiang Qinghui;Zhou Zhiwei;Li Xin;Xin Jiwu;Basit Abdul;Ren Yangyang;He Xu;Chu Weijing;Hou Jingdi
在理论预测和实验验证的基础上，对比研究了Al、Ga和In掺杂对Cu 3SbSe 4热电性能的影响。结果表明，Al/Ga/In掺杂可以显著提高器件的电导率，同时保持较高的能带简并度，从而获得较高的功率因数，提高器件的载流子浓度和Seebeck系数。最终，再加上降低的晶格热导率，所有三种元素（Al/Ga/In）取代的样品相对于未掺杂的Cu 3SbSe 4获得了高度改善的热电性能。与相同Al/In掺杂量的样品相比，Ga轻掺杂样品在较宽的温度范围内表现出更好的TE性能，Cu3Sb0.995Ga0.005Se4样品在623 K时具有单掺杂Cu 3SbSe 4中最高的ZT值0.9，比纯Cu 3SbSe 4的ZT值提高了约80%。本工作提供了一种替代方法，以提高TE性能的Cu 3SbSe 4通过选择有效的掺杂剂，以削弱之间的耦合电导率和塞贝克系数。
The effect of Al-, Ga-, and In-doping on the thermoelectric (TE) properties of Cu3SbSe4has been comparatively studied on the basis of theoretical prediction and experimental validation. It is found that tiny Al/Ga/In substitution leads to a great enhancement of electrical conductivity with high carrier concentration and also large Seebeck coefficient due to the preserved high band degeneracy and thereby a remarkably high power factor. Ultimately, coupled with the depressed lattice thermal conductivity, all three elements (Al/Ga/In) substituted samples have obtained a highly improved thermoelectric performance with respect to undoped Cu3SbSe4. Compared to the samples at the same Al/In doping level, the slightly Ga-doped sample presents better TE performance over the wide temperature range, and the Cu3Sb0.995Ga0.005Se4sample presents a record high ZT value of 0.9 among single-doped Cu3SbSe4at 623 K, which is about 80% higher than that of pristine Cu3SbSe4. This work offers an alternative approach to boost the TE properties of Cu3SbSe4by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.