Characteristics of Ion-Induced Bending Phenomenon
Characteristics of Ion-Induced Bending Phenomenon
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离子诱导弯曲现象的特征
DOI：
10.1143/jjap.49.056501
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
S. Kanemaru
中科院分区：
文献类型：
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作者：
Tomoya Yoshida;M. Nagao;S. Kanemaru
我们提出了一种基于离子诱导弯曲（IIB）现象的弯曲薄膜技术，该技术允许制造三维器件结构和阵列，例如微机电系统（MEMS）器件。我们研究了IIB特性与各种类型的薄膜在各种离子辐照条件下。我们发现IIB现象的重要参数是离子辐照深度和离子剂量。我们还发现，弯曲曲率可以通过离子注入的归一化深度和离子剂量来控制。用这种技术可以制造出几十纳米厚的垂直薄膜阵列的微米区域。
We propose a technique of bending thin films based on the ion-induced bending (IIB) phenomenon that allows the fabrication of three-dimensional device structures and arrays, such as devices for micro-electromechanical systems (MEMSs). We investigated the IIB characteristics with various types of thin films under various ion irradiation conditions. We found that the important parameters of the IIB phenomenon were the depth of ion irradiation and ion dose. We also found that bending curvature could be controlled by the normalized depth of ion implantation and the dose of ions. Microsized regions of vertically standing thin-film arrays that were tens of nanometers thick could be produced with this technique.