Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications
Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications
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脉冲功率应用下新型 15 kV SiC n-GTO 的分析
DOI：
10.1109/ppps34859.2019.9009743
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
S. Ryu
中科院分区：
文献类型：
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作者：
M. Kim;T. Tsoi;J. Forbes;A. Bilbao;S. Lacouture;S. Bayne;H. O’Brien;A. Ogunniyi;S. Ryu
碳化硅（SiC）栅极可关断晶闸管（GTO）由于其增强的材料特性，是脉冲功率和功率电子应用中提高功率密度和散热能力的合适选择。为了实现硅功率器件向SiC器件的过渡，必须对新开发的SiC器件进行长期可靠性评估。本实验的测试平台由脉冲形成网络（PFN）（）组成，该网络使被测器件（DUT）经受15 kV SiC n型（n掺杂外延层）GTO，电流水平高达1.0 kA，脉冲宽度为120 µs。在测试之间获取器件的静态电气特性，如正向I-V曲线、正向栅极导通和正向延迟。扫描电子显微镜（SEM）成像用于寻找器械降解的物理证据。DUT经受20，000次高电流密度脉冲，此时其阻断能力未发生重大变化。
Silicon carbide (SiC) gate turn-off thyristors (GTOs) are an appropriate option for increased power density and thermal dissipating capabilities in pulsed power and power electronics applications due to their enhanced material characteristics. For the transition of silicon (Si)power devices to SiC, it is imperative to evaluate the long-term reliability of newly developed SiC devices. The testbed for this experiment consists of a pulse forming network (PFN) () that subjects the device under test (DUT) a 15-kV SiC n-type (n-doped epi layer) GTO, up to a current level of 1.0 kA with a pulse width of 120 µs, The static electrical characteristics of the device, such as the forward I- V curve, forward gate conduction, and forward hold-off were taken between testing. Scanning electron microscope (SEM) imaging was used to find physical evidence of degradation on the device. The DUT was subjected to 20,000 high-current density pulses, at which point it exhibited no major changes in blocking capability.