Zn(O,S) buffer prepared by atomic layer deposition for sequentially grown Cu(In,Ga)(Se,S)2 solar cells and modules
Zn(O,S) buffer prepared by atomic layer deposition for sequentially grown Cu(In,Ga)(Se,S)2 solar cells and modules
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DOI：
10.1016/j.solmat.2014.03.044
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发表时间：
2014-07
影响因子：
6.9
通讯作者：
S. Merdes;V. Malinen;F. Ziem;I. Lauermann;M. Schüle;F. Stober;F. Hergert;N. Papathanasiou;R. Schlatmann
中科院分区：
文献类型：
--
作者：
S. Merdes;V. Malinen;F. Ziem;I. Lauermann;M. Schüle;F. Stober;F. Hergert;N. Papathanasiou;R. Schlatmann
黄铜矿薄膜技术的可持续发展需要用环保材料替代CdS缓冲层。 Zn(O,S) 和 In2S3 等替代缓冲剂已成功开发，其效率可与 CdS 缓冲太阳能电池相媲美。在这篇文章中，我们报告了通过在 Cu(In,Ga)(Se,S)2 吸收体上原子层沉积开发无镉缓冲液的结果。 Zn(O,S) 缓冲层沉积在 Bosch Solar CISTech GmbH 连续生长的 Cu(In,Ga)(Se,S)2 吸收体上。研究了吸收器表面处理和工艺参数的影响。实验室规模的太阳能电池的效率和开路电压分别超过 15% 和 600 mV，优于 CdS 缓冲基准。迷你组件结果显示效率达到11.4%。
A sustainable development of the chalcopyrite thin film technology requires the replacement of CdS buffer layer by environment friendly materials. Alternative buffers such as Zn(O,S) and In2S3have already been successfully developed and led to efficiencies comparable to those of CdS-buffered solar cells. In this contribution, we report the results of the development of Cd-free buffers by atomic layer deposition on Cu(In,Ga)(Se,S)2absorbers. Zn(O,S) buffer layers were deposited on sequentially grown Cu(In,Ga)(Se,S)2absorbers from Bosch Solar CISTech GmbH. The influence of the absorber surface conditioning and process parameters is studied. Efficiencies and open circuit voltages exceeding 15% and 600 mV, respectively, which are better than those of CdS-buffered references, are achieved with laboratory scale solar cells. Mini-module results show efficiency reaching 11.4%.