Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator
Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator
复制标题
低压差稳压器的总剂量效应建模
DOI：
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发表时间：
2006
影响因子：
1.8
通讯作者：
D. Platteter
中科院分区：
文献类型：
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作者：
V. Ramachandran;B. Narasimham;D. Fleetwood;peixiong zhao;W. Holman;A. Witulski;R. Pease;G. Dunham;J. Seiler;D. Platteter
根据实验数据和电路模拟解释了低压差稳压器中的总电离剂量效应。晶体管增益退化被证明是在较低剂量率的电路退化的主要原因。此外，集电极到发射极的漏电流在一个NPN晶体管的带隙参考电路的一部分是负责增加postirradiation输出电压在高剂量率。带隙，差分放大器和输出通道晶体管电路块的参数变化被确定为负责所观察到的电路退化的各个方面。氧化层陷阱和界面陷阱电荷的不同退火特性是导致输出电压复杂的辐射后恢复的原因
Total ionizing dose effects in a low-dropout voltage regulator are explained based on experimental data and circuit simulations. Transistor gain degradation is shown to be the dominant cause of the circuit degradation at lower dose rates. In addition, collector-to-emitter leakage current in one of the NPN transistors of the bandgap reference part of the circuit is responsible for increasing the postirradiation output voltage at high dose rates. Parametric changes in the bandgap, differential amplifier, and output pass transistor circuit blocks are identified that are responsible for various aspects of the observed circuit degradation. The different annealing characteristics of oxide-trap and interface-trap charge are responsible for the complex postirradiation recovery of the output voltage