Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
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DOI：
10.1088/2053-1591/3/7/076406
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发表时间：
2016-07
影响因子：
2.3
通讯作者：
H. Reichlová;H. Reichlová;V. Novák;Y. Kurosaki;M. Yamada;Hiroyuki Yamamoto;A. Nishide;Jun Hayakawa;H. Takahashi;Miroslav Maryško;J. Wunderlich;J. Wunderlich;X. Marti;T. Jungwirth;T. Jungwirth
中科院分区：
文献类型：
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作者：
H. Reichlová;H. Reichlová;V. Novák;Y. Kurosaki;M. Yamada;Hiroyuki Yamamoto;A. Nishide;Jun Hayakawa;H. Takahashi;Miroslav Maryško;J. Wunderlich;J. Wunderlich;X. Marti;T. Jungwirth;T. Jungwirth
We investigate the thickness and temperature dependence of a series of Ni 0.8 Fe 0.2 /Ir 0.2 Mn 0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet ( t FM / t AFM ) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of t FM / t AFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.
