Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
复制标题
超高速赝晶 AlGaAs/InGaAs（GaAs 上）MODFET 的表征
DOI：
10.1109/16.40906
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发表时间：
1989
影响因子：
3.1
通讯作者：
L. Eastman
中科院分区：
文献类型：
--
作者：
L. Nguyen;P. Tasker;D. Radulescu;L. Eastman
作者报告了超高速赝晶AlGaAs/InGaAs（GaAs上）调制掺杂场效应晶体管（MODFFET）的详细特性，重点是器件的开关特性。标称0.1 μ m栅长器件的电流增益截止频率（f/sub t/）高达152 GHz。f/sub t/的这个值对应于大约1.0 ps的总延迟，并且归因于层结构、器件布局和制造工艺的优化。它示出，在这些非常短的栅极长度的设备中的电子渡越时间仍然占总延迟的约60%，并且，因此，开关速度的显着改善是可能的，进一步减少栅极长度。报道的结果清楚地表明，作为一个超高速器件的赝晶AlGaAs/InGaAs MODFET的潜力。其优异的开关特性归因于高饱和速度（约2*10/sup 7/ cm/s）、2DEG片密度（2.5*10/sup 12/ cm/sup-2/）和电流驱动能力（在峰值电流下>200 mA/mm）。>
The authors report a detailed characterization of ultrahigh-speed pseudomorphic AlGaAs/InGaAs (on GaAs) modulation-doped field-effect transistors (MODFETs) with emphasis on the device switching characteristics. The nominal 0.1- mu m gate-length device exhibit a current gain cutoff frequency (f/sub t/) as high as 152 GHz. This value of f/sub t/ corresponds to a total delay of approximately 1.0 ps and is attributed to the optimization of layer structure, device layout, and fabrication process. It is shown that the electron transit time in these very short gate-length devices still accounts for approximately 60% of the total delay, and, as a result, significant improvements in switching speed are possible with further reductions of gate length. The results reported clearly demonstrate the potential of the pseudomorphic AlGaAs/InGaAs MODFET as an ultrahigh-speed device. Its excellent switching characteristics are attributed to the high saturation velocity ( approximately 2*10/sup 7/ cm/s), 2DEG sheet density (2.5*10/sup 12/ cm/sup -2/), and current drive capability (>200 mA/mm at the peak transconductance). >