High spectral response of self-driven GaN-based detectors by controlling the contact barrier height
High spectral response of self-driven GaN-based detectors by controlling the contact barrier height
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通过控制接触势垒高度实现自驱动 GaN 探测器的高光谱响应
DOI：
10.1038/srep16819
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发表时间：
2015-11-17
影响因子：
4.6
通讯作者：
Zhang Z
中科院分区：
文献类型：
--
作者：
Sun X;Li D;Li Z;Song H;Jiang H;Chen Y;Miao G;Zhang Z
采用叉指肖特基和近欧姆接触实现了叉指结构的GaN基自驱动紫外探测器的高光谱响应。设计的Ni/GaN/Cr、Ni/GaN/Ag和Ni/GaN/Ti/Al探测器的零偏压响应率分别与0.037 A/W、0.083 A/W和0.104 A/W的叉指接触肖特基势垒差成正比。研究了光电流与电压的关系，在正向偏置下表现出高的增益。电子和空穴迁移率模型和空穴捕获模型之间的差异被认为是主要的光电流增益机制。这些探测器工作在光导模式和耗尽模式下，具有较大的光电流增益和较高的速度，可以扩展GaN基金属-半导体-金属探测器的应用范围。
High spectral response of self-driven GaN-based ultraviolet detectors with interdigitated finger geometries were realized using interdigitated Schottky and near-ohmic contacts. Ni/GaN/Cr, Ni/GaN/Ag and Ni/GaN/Ti/Al detectors were designed with zero bias responsivities proportional to the Schottky barrier difference between the interdigitated contacts of 0.037 A/W, 0.083 A/W and 0.104 A/W, respectively. Voltage-dependent photocurrent was studied, showing high gain under forward bias. Differences between the electron and hole mobility model and the hole trapping model were considered to be the main photocurrent gain mechanism. These detectors operate in photoconductive mode with large photocurrent gain and depletion mode with high speed and can extend GaN-based metal-semiconductor-metal detector applications.