Kβ2 X-ray emission bands of Ga and As and their compounds
Kβ2 X-ray emission bands of Ga and As and their compounds
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Ga、As及其化合物的Kβ2 X射线发射带
DOI：
10.1016/s0022-3697(74)80179-4
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发表时间：
1974
期刊：
影响因子：
--
通讯作者：
A. Meisel
中科院分区：
文献类型：
--
作者：
I. Topol;J. Tilgner;G. Leonhardt;A. Meisel
所研究化合物的Ga和AsKβ2发射带由一个或多或少明显的Kβ2主带组成，这是一个短波长边带，根据“突然近似”方法的计算，该边带基本上可以归类为KMIV、V→MIV、VNII、II卫星和长波3D→1带。Ga_2(SO_4)_3、Ga(NO_3)_3、Ga_2O_3、NaH_2AsO_4、K_3AsO_4和As_2O_3等化合物也分别在距主带约12和15 eV的距离处出现长波边极大，这是由于电子从以0.2S特征为主的带或能级跃迁所致。由于K能级的宽度和仪器的扭曲，AlIBV化合物的Kβ2主带不那么明显。上价带态密度极大值之间的距离只能通过长波长一侧的带肩或不对称性来识别。用赝势能带结构方法计算了β中的Ga和AsK能带，并考虑了跃迁几率和仪器失真的影响，得到了与实验一致的结果。
Ga and AsKβ2emission bands of the compounds under study consist of a more or less pronouncedKβ2main band, a short-wavelength side band which according to calculations by the ‘sudden approximation’ method may be essentially assigned to aKMIV,V→MIV,VNII,IIIsatellite, and long-wavelength 3d→ 1sbands. Compounds such as Ga2(SO4)3, Ga(NO3)3, Ga2O3, NaH2AsO4, K3AsO4, and As2O3also show long-wavelength side-maxima at a distance of about 12 and 15 eV, respectively, from the main band, which are due to electron transitions from bands or levels with a preponderant 0 2scharacter.TheKβ2main band ofAIIIBVcompounds is less pronounced owing to the widths of theKlevels and to instrumental distortions. The distance between the maxima of the state density of the upper valence bands can be recognized only by a shoulder or asymmetry of the band at the long-wavelength side. By calculation of the Ga and AsKβ2bands in GaAs with a pseudopotentialkpband structure method, and allowing for the influence of both the transition probability and instrumental distortion excellent agreement with experiment is obtained.