Preface to the JPCM Special Issue on Molecular Magnetism
Preface to the JPCM Special Issue on Molecular Magnetism
复制标题
JPCM 分子磁学特刊序言
DOI：
10.1088/1361-648x/abaa07
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Dowben, Peter A
中科院分区：
文献类型：
--
作者：
Weber, Birgit;Dowben, Peter A
这是一本关于分子磁体的特刊，也是许多JPCM董事会成员，过去和现在都期待已久的特刊。对分子磁体的兴趣由来已久，其范围从基本方面到更实际的实现。利用分子尺度上的自旋自由度来追求分子自旋电子学的前提是，对磁态的电压控制使得非易失性器件元件可以在不需要大电流密度和功耗的情况下切换其状态。从分子磁体制造器件的成功，结合通过电手段操纵自旋态的成功迹象，表明了导致开发新型分子自旋电子学的新方法（[1]回顾了这种情况）。分子系统非常有可能提供在室温下工作的器件，尺寸小于10纳米，同时提供低功率GHz非易失性局部磁电逻辑或存储操作。随着人们对新型可印刷分子电子器件的期望越来越高，柔性和高密度非易失性存储器件的设计不仅是一个热门话题，而且是实现低功耗廉价柔性电子器件的可能途径。自旋交叉（SCO）现象涉及三维过渡金属化合物中金属离子从低自旋态到高自旋态的转变，在分子自旋电子器件中具有潜在的适用性。虽然这只是一类分子磁铁，但SCO分子是本期特刊中重点介绍的几篇文章的中心部分。对这门材料课的兴趣增加可能有几个原因。SCO分子的一个吸引之处在于可以在室温下操纵开关过程。这些分子吸引人们注意的另一个原因是，它们有多种转换和读取不同自旋态的可能性，这使得这些分子对设备工程特别有吸引力。为了理解使用SCO分子体系实现实际装置的原理，有必要重申需要满足的9个要求（在[1]中部分讨论）。(1)为了实用，器件需要适应制造技术，这就要求分子器件可以制成薄膜。(2)需要不同自旋态之间的自旋跃迁。(3)将分子“锁定”在特定状态的能力；(4)在不同温度（理想的室温）下等温“解锁”和切换自旋状态的能力。(5)“写”操作需要附带一个读机制；这意味着自旋状态很容易被“感知”，例如自旋状态的变化伴随着电导的变化。SCO分子系统的电导变化是众所周知的，但如果要在器件中利用这一点，那么这应该用于介电衬底上的分子膜，因此SCO分子系统在器件性能中占主导地位。(6)实际操作时，设备应能在室温下工作。(7)导通状态电阻应尽可能低，以免对器件延迟时间造成影响。(8)状态开关的电压控制需要在一百万亿个开关中存活，最好是一百万亿个开关，而不退化。(9)“开”状态的读机制应与“关”状态明显不同。
This is a special issue on molecular magnets, and a special issue long awaited by many JPCM board members, past and present. The interest in molecular magnets is long standing and ranges from the fundamental aspects to the more practical implementations. The premise for pursuing molecular spintronics, utilizing the spin degree of freedom on the molecular scale, is because voltage control of the magnetic states enables nonvolatile device elements whose state may be switched without large current densities and power consumption. The successes with device fabrication from molecular magnets, combined with indications of success in manipulating the spin state by electrical means, suggest new approaches leading to developing novel molecular spintronics (a situation reviewed in [1]). Molecular systems have the very real possibility of providing devices that operate at room temperature, on a size scale less than 10 nm, while delivering low power GHz nonvolatile local magneto-electric logic or memory operations. As the expectations for novel printable molecular electronics grows, the design of flexible and high-density nonvolatile memory devices remains a not only hot topic, but a possible route to low power inexpensive flexible electronics. The spin crossover (SCO) phenomenon, which relates to the transition between a low spin state of the metal ion to a high-spin (HS) state in 3d transition metal compounds, has potential applicability in molecular spintronic devices. While this is only one class of molecular magnets, the SCO molecules are the center piece of several of the articles highlighted in this special issue. There are several possible reasons for the increased interest in this material class. One attraction of the SCO molecules is the possibility of manipulating the switching progress around room temperature. Other reasons that these molecules garner attention are the multiple possibilities to switch and to read the different spin states, which makes those molecules especially attractive for device engineering. To understand the principles for achieving a practical device, using SCO molecular systems, it worthwhile reiterating the 9 requirements that need to be met (as partly discussed in [1]).(1) To be practical, the devices need to be amenable to manufacturing techniques, and this requires that the molecular devices can be fabricated as thin films.(2) A spin transition between different spin states is needed.(3) The ability to ‘lock’a molecule in a particular state and (4) isothermally ‘unlock’and switch the spin state at various temperatures, ideally room temperature.(5) The ‘write’operation needs to be accompanied by a read mechanism; this means that there is a property where the spin state is easily ‘sensed’, for example the spin state change is accompanied by a change in conductance. Conductance changes of the SCO molecular systems are well known, but if this is to be exploited in a device, then this should be for molecular films on a dielectric substrate, so that it is the SCO molecular system that dominates the device performance.(6) For practical operation, the device should be able to function at room temperature.(7) The ‘on’state resistance should be as low as possible so as not to contribute the device delay time.(8) The voltage control of state switching needs to survive a million million switches, preferably a million billion times, without degradation.(9) the read mechanism for the “on” state should be significantly different from the “off” state.”
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