Measurement of low-noise column readout circuits for CMOS image sensors
Measurement of low-noise column readout circuits for CMOS image sensors
复制标题
DOI：
10.1109/ted.2006.875813
复制
发表时间：
2006-07-01
影响因子：
3.1
通讯作者：
Kawahito, Shoji
中科院分区：
文献类型：
--
作者：
Kawai, Nobuhiro;Kawahito, Shoji
本文介绍CMOS图像传感器高增益列读出电路的测试结果。测试结果表明，当第一级增益大于6时，双级结构的噪声抵消性能优于单级结构。在增益为24时，测得的最低输入参考噪声为49 mu V-rms。
This brief describes,the measurement results of high-gain column readout circuits for CMOS image sensors. The measurement results show that the double-stage noise-canceling architecture has better noise performance than that of the single-stage architecture at a first-stage gain of greater than 6. The lowest input-referred noise is measured to be 49 mu V-rms at a gain of 24.