Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
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DOI：
10.7567/apex.11.031004
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发表时间：
2018-02
影响因子：
2.3
通讯作者：
T. Tanikawa;Kazuki Ohnishi;M. Kanoh;T. Mukai;T. Matsuoka
中科院分区：
文献类型：
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作者：
T. Tanikawa;Kazuki Ohnishi;M. Kanoh;T. Mukai;T. Matsuoka
使用两光子兴奋的光致发光证明了GAN膜中螺纹脱位的三维成像。尽管观察到折射率不匹配引起的畸变，但分别解决了小于108 cm -2的螺纹位错。通过增加GAN膜厚度，可以清楚地观察到螺纹位错密度的减小。
The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 µm for the in-plane and depth directions, respectively. The threading dislocations with a density less than 108 cm−2 were resolved, although the aberration induced by the refractive index mismatch was observed. The decrease in threading dislocation density was clearly observed by increasing the GaN film thickness. This can be considered a novel method for characterizing threading dislocations in GaN films without any destructive preparations.