P-Zn3P2 single nanowire metal-semiconductor field-effect transistors
P-Zn3P2 single nanowire metal-semiconductor field-effect transistors
复制标题
P-Zn3P2单纳米线金属半导体场效应晶体管
DOI：
10.1063/1.2960494
复制
发表时间：
2008-08-01
影响因子：
3.2
通讯作者：
Qin, G. G.
中科院分区：
文献类型：
--
作者：
Liu, C.;Dai, L.;Qin, G. G.
据我们所知，所有报道的单纳米线金属半导体场效应晶体管（mesfet）都是基于n型纳米线。本文报道了基于p型Zn3P2单NWs的mesfet。p型Zn3P2单NW mesfet工作于增强模式（e模式）。源极漏极电流随栅极偏置（V-G）的增加而减小，证实了Zn3P2 NWs的p型电导。通常，p型Zn3P2单NW MESFET的通/关电流比为10(3)，阈值栅极电压为-0.4 V，最大跨导为110 nS。(c) 2008年美国物理研究所。
As far as we know, all the single nanowire (NW) metal-semiconductor field-effect transistors (MESFETs) reported are based on n-type NWs. We report MESFETs based on p-type Zn3P2 single NWs in this paper. The p-type Zn3P2 single NW MESFETs operate in the enhancement mode (E-mode). The source-drain current decreases with gate bias (V-G) increasing, confirming the p-type conductance of the Zn3P2 NWs. Typically, the p-type Zn3P2 single NW MESFET has an on/off current ratio of 10(3), a threshold gate voltage of -0.4 V, and a maximum transconductance of 110 nS. (c) 2008 American Institute of Physics.