NANOWIRES FORMED IN ANODIC OXIDE NANOTEMPLATES
NANOWIRES FORMED IN ANODIC OXIDE NANOTEMPLATES
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DOI：
10.1557/jmr.1994.1014
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发表时间：
1994-04-01
影响因子：
2.7
通讯作者：
MOSKOVITS, M
中科院分区：
文献类型：
--
作者：
ALMAWLAWI, D;LIU, CZ;MOSKOVITS, M
描述了一种简单的电化学方法，用于生产直径在 10 至 200 nm 连续范围内的金属或半导体纳米线。该技术涉及一个三步过程，首先以电化学方式生成具有均匀纳米尺寸孔的氧化铝模板，然后在其中沉积金属或半导体。然后通过回蚀氧化物基质将纳米线暴露用于研究或器件制造。例子；显示了通过这种技术制造的镉纳米线。
A simple electrochemical method is described for producing metal or semiconductor nanowires with diameters in the continuous range 10 to 200 nm. The technique involves a three-step process that begins with the electrochemical generation of an aluminum oxide template with uniform nanometer-sized pores, followed by the deposition of metal or semiconductor in them. The nanowires are then exposed for study or device fabrication by etching back the oxide matrix. Examples; of cadmium nanowires fabricated by this technique are shown.