High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures.
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures.
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DOI：
10.1002/adma.201500889
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发表时间：
2015-07-01
期刊：
影响因子：
--
通讯作者：
Patanè A
中科院分区：
文献类型：
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作者：
Mudd GW;Svatek SA;Hague L;Makarovsky O;Kudrynskyi ZR;Mellor CJ;Beton PH;Eaves L;Novoselov KS;Kovalyuk ZD;Vdovin EE;Marsden AJ;Wilson NR;Patanè A
通过利用石墨烯的宽带透明性、InSe的直接带隙以及InSe与石墨烯的良好带线，实现了机械形成的InSe -石墨烯范德华异质结构的高宽带光响应性。光响应率超过其他范德华异质结构，光谱响应从近红外延伸到可见光谱。
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near‐infrared to the visible spectrum.