The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique
The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique
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DOI：
10.1088/0957-4484/18/41/415202
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发表时间：
2007-10-17
期刊：
影响因子：
3.5
通讯作者：
Mizutani, T.
中科院分区：
文献类型：
--
作者：
Nosho, Y.;Ohno, Y.;Mizutani, T.
研究了F(4)TCNQ（四氟四氰-对喹诺二甲烷）在碳纳米管场效应晶体管（cnfet）中的p型化学掺杂效应。采用多探针cnfet传输线模型技术，研究了化学掺杂对通道电阻和接触电阻的影响。研究发现，化学掺杂可以有效地降低接触电阻和通道电阻。通过在通道上掺杂F(4)TCNQ，提高了顶栅cnfet器件的跨导、导通电阻和通断比等性能。
We have studied the effects of p-type chemical doping with F(4)TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/ off ratio were improved by the F(4)TCNQ chemical doping on the access regions.