Highly Isotropic In-plane Upper Critical Field in the Anisotropic s-Wave Superconductor 2H-NbSe2
Highly Isotropic In-plane Upper Critical Field in the Anisotropic s-Wave Superconductor 2H-NbSe2
复制标题
DOI：
10.1007/s10948-019-05333-z
复制
发表时间：
2019-11
影响因子：
1.8
通讯作者：
S. Yasuzuka;S. Uji;S. Sugiura;T. Terashima;Y. Nogami;K. Ichimura;S. Tanda
中科院分区：
文献类型：
--
作者：
S. Yasuzuka;S. Uji;S. Sugiura;T. Terashima;Y. Nogami;K. Ichimura;S. Tanda
对层状过渡金属二硫属化物2 H-NbSe 2的电阻率进行了测量，研究了其在14.5T磁场和2.0K温度下的上临界场（Hc 2）的面内各向异性.对于在基面内旋转的场，特征场H（定义为电阻率达到零时的场强）的面内各向异性在低温下表现出双重对称性。在此基础上，讨论了Hc 2的面内各向异性和2 H-NbSe 2的超导能隙结构。
Resistivity measurements for a layered transition metal dichalcogenide 2H-NbSe2were performed to investigate the in-plane anisotropy of the upper critical field (Hc2) for magnetic fields up to 14.5 T at temperatures down to 2.0 K. For fields rotated within the basal plane, the in-plane anisotropy of a characteristic fieldH∗(defined as the field strength at which the resistivity reaches zero) showed twofold symmetry at low temperatures. On the basis of this result, the in-plane anisotropy ofHc2and the superconducting gap structure in 2H-NbSe2are discussed.