Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
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稀 III-N-V 合金中的氢效应：从缺陷工程到纳米结构
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
A. Polimeni
中科院分区：
文献类型：
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作者：
G. Pettinari;M. Felici;R. Trotta;M. Capizzi;A. Polimeni
氢引入引起的III-N-V半导体带隙能的变化是H在这些材料中产生的最显著的效应。一个特别强调的是，在这里给氢与H扩散动力学在稀氮化物的N-活性钝化的组合。二次离子质谱显示了一个非常陡峭的（小于5纳米/十年）的最前沿的H扩散分布在Ga（AsN）在适当的氢化条件下。这一发现提示的机会，平面内的纳米结构的氢掺入，因此，在纳米级的材料带隙能量的调制。介绍了通过光刻氢化法制备的量子点的性质，显示了这些新型纳米结构的零维特性。最后展望了这种纳米纤维方法的应用前景。
The variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5 nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined.