Optimisation of Spin-Valve Planar Hall Effect Sensors for Low Field Measurements
Optimisation of Spin-Valve Planar Hall Effect Sensors for Low Field Measurements
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DOI：
10.1109/tmag.2011.2173671
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发表时间：
2012-03
影响因子：
2.1
通讯作者：
M. Volmer;J. Neamtu
中科院分区：
文献类型：
--
作者：
M. Volmer;J. Neamtu
本文介绍了基于平面霍尔效应（PHE）的低场磁传感器的电流磁测量和微磁模拟的结果。圆盘形结构的类型Co/Cu/Ni 80 Fe 20，4 mm直径，通过磁控溅射沉积到Si衬底上，用于构建磁传感器。在研究的这个阶段，在样品沉积期间没有定义单轴各向异性轴。已经考虑了两种类型的应用：（i）磁场测量和（ii）旋转感测。为了在施加的磁场的作用下获得PHE传感器内部的磁化的相干旋转，使用Happl、DC或AC磁偏置场。通过这些手段，可以调谐PHE信号的磁灵敏度和磁滞宽度。在10 mA的驱动电流下，灵敏度在0.07 ~ 0.17 μV·A-1·m之间。微磁学模拟被用来解释这些传感器的一些场角行为。
In this paper are presented results of galvanomagnetic measurements and micromagnetic simulations performed on low-field magnetic sensors based on the planar Hall effect (PHE). Disc-shaped structures of the type Co/Cu/Ni80Fe20, 4 mm diameter, deposited by magnetron sputtering onto Si substrate, were used to build magnetic sensors. At this stage of study, no uniaxial anisotropy axes were defined during the samples deposition. Two types of applications have been considered: (i) magnetic field measurements and (ii) rotation sensing. In order to obtain a coherent rotation of the magnetization inside the PHE sensor under the action of an applied magnetic field, Happl, DC or AC magnetic biasing fields were used. By these means the magnetic sensitivity and the hysteresis width of the PHE signal can be tuned. Sensitivities between 0.07 and 0.17 μV·A-1·m have been obtained for a driving current of 10 mA. Micromagnetic simulations were used to explain some field angular behavior of these sensors.