FE simulation of InGaN QD formation at the edge of threading dislocation in GaN
FE simulation of InGaN QD formation at the edge of threading dislocation in GaN
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GaN 穿透位错边缘 InGaN QD 形成的有限元模拟
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
G. Nouet
中科院分区：
文献类型：
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作者：
P. Dłużewski;A. Belkadi;Jun Chen;P. Ruterana;G. Nouet
采用三维非线性有限元方法，逐级模拟了氮化镓上沉积in x Ga 1-x N层in -Ga偏析的应力诱导扩散过程。从热力学角度看，这一过程是由各向异性非线性弹性结构中残余应力梯度引起的驱动力所控制的。我们考虑的应力来源是在蓝宝石上沉积的氮化镓层的平面视图HRTEM研究中检测到的一组螺纹位错。
The stress induced diffusion process of In-Ga segregation in In x Ga 1-x N layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire.