Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
复制标题
DOI：
10.1063/1.3607480
复制
发表时间：
2011-04
影响因子：
4
通讯作者：
Y. Ando;K. Kasahara;K. Yamane;Y. Baba;Y. Maeda;Y. Hoshi;K. Sawano;M. Miyao;K. Hamaya
中科院分区：
文献类型：
--
作者：
Y. Ando;K. Kasahara;K. Yamane;Y. Baba;Y. Maeda;Y. Hoshi;K. Sawano;M. Miyao;K. Hamaya
我们研究了铁磁-硅界面自旋积累的电学检测，这可以通过测量三端横向器件中的Hanle效应来验证。所使用的器件结构由半导体Si沟道和肖特基隧道接触组成。在低电流偏置区，Hanle效应曲线仅在正向偏置条件下观察到。这可以被认为是正向偏置接触处的电可检测性高于反向偏置接触处的电可检测性。这是可能的证据检测自旋极化的电子中产生的Si通道。
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability at the forward-biased contact is higher than that at the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.