Competing terahertz radiation mechanisms in semi-insulating InP at high-density excitation
Competing terahertz radiation mechanisms in semi-insulating InP at high-density excitation
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DOI：
10.1063/1.1796532
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发表时间：
2004-10-04
影响因子：
4
通讯作者：
Suemoto, T
中科院分区：
文献类型：
--
作者：
Nakajima, M;Oda, Y;Suemoto, T
研究了半绝缘InP表面太赫兹辐射的激发密度依赖性。通过改变激发密度，观察到波形的实质性变化，辐射场的极性反转。不同的方位角依赖性也观察到低和高密度激发。这些事实表明，三种不同的辐射机制共存，并占主导地位的辐射机制的变化，从漂移电流，低激发密度，高激发密度的扩散电流和光整流的激发密度的增加。(C)2004年，美国物理学会。
The excitation density dependence of the terahertz radiation from a semi-insulating InP surface was investigated in detail. By changing the excitation density, substantial changes were observed in the wave form with a reversal of the polarity of the radiation field. Different azimuthal angle dependence was also observed for low- and high-density excitations. These facts indicate that three different radiation mechanisms coexist and that the dominant radiation mechanism changes with increasing the excitation density from the drift current, for low-excitation density, to the diffusion current and the optical rectification, for high-excitation density. (C) 2004 American Institute of Physics.