Microstructure and electrical properties in Zn-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 piezoelectric ceramics
Microstructure and electrical properties in Zn-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 piezoelectric ceramics
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DOI:
10.1016/j.jallcom.2015.02.093
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发表时间:
2015-07
影响因子:
6.2
通讯作者:
Zhihao Zhao;Xiaolei Li;Huiming Ji;Yejing Dai;T. Li
中科院分区:
文献类型:
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作者:
Zhihao Zhao;Xiaolei Li;Huiming Ji;Yejing Dai;T. Li
Piezoelectric ceramics doped with small amounts of elements usually cause significant improvement in piezoelectric properties. In this study, we prepared Ba 0.85 Ca 0.15 Ti 0.90 Zr 0.10 O 3–x wt% ZnO (0⩽ x⩽ 0.16) ceramics via a conventional solid-state reaction method. The evolution of domain structure, relaxor behavior, ferroelectric and piezoelectric properties with Zn doping was systematically investigated. The ceramics with x= 0.08 possess slender domain patterns and high domain wall density. The Ba 0.85 Ca 0.15 Ti 0.90 Zr 0.10 O 3–8 wt% ZnO ceramics show maximum remnant polarization and spontaneous polarization (P r= 10.14 μC/cm 2, P s= 19.68 μC/cm 2). A giant piezoelectric coefficient of d 33= 603 pC/N and high planar electromechanical coupling factor of k p= 0.56 were obtained for the sample of x= 0.08, showing the potential possibilities for lead-free piezoelectric application.