Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper–indium–gallium–selenide solar cell efficiency
Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper–indium–gallium–selenide solar cell efficiency
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DOI：
10.1016/j.jpowsour.2013.07.090
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发表时间：
2014-01
影响因子：
9.2
通讯作者：
T. Hsieh;S. Lue;J. Ao;Yun Sun;W. Feng;Liann-Be Chang
中科院分区：
文献类型：
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作者：
T. Hsieh;S. Lue;J. Ao;Yun Sun;W. Feng;Liann-Be Chang
采用化学浴沉积法在玻璃衬底和铜铟镓硒（CIGS）吸附层表面制备了用于太阳能电池制造的氧化硫化锌（Zn(S，O)）薄膜。快速热退火（RTA）改善了Zn（S，O）层的光性能和电学性能。比较了不同气氛下退火样品的Zn（S，O）性能。所得退火Zn（S，O）薄膜厚度为80 ~ 100nm。在氧气氛下退火后，带隙由3.8 eV减小到3.3 eV，透光率提高95%以上。氧退火后样品的S/(S + O)比值为0.28，S/Zn比值为0.72。由退火Zn（S，O）缓冲层组成的CIGS太阳能电池效率（6.15%）高于未退火Zn（S，O）缓冲层（4.56%）。太阳能电池的性能与沉积的Zn（S，O）特性有关。氧退火Zn（S，O）薄膜的载流子浓度显著提高，透光率增加，晶体结构改善，有助于提高电池性能。
Zinc oxysulfide (Zn(S,O)) thin films are fabricated using a chemical bath deposition method onto glass substrates and the surface of copper–indium–gallium–selenide (CIGS) adsorption layers for solar cell fabrication. The light and electric properties of the Zn(S,O) layers are improved after rapid thermal annealing (RTA). The Zn(S,O) properties of samples annealed under various atmospheres are compared. The resulting annealed Zn(S,O) films are 80–100 nm thick. The band gap decreases from 3.8 eV to 3.3 eV and the light transmittance is improved by more than 95% after annealing under oxygen atmosphere. The oxygen-annealed sample has a S/(S + O) ratio of 0.28 and a S/Zn ratio of 0.72. The CIGS solar cell that consists of the annealed Zn(S,O) buffer layer is more efficient (6.15%) than that of the non-annealed Zn(S,O) (4.56%). The solar cell performance is correlated with the deposited Zn(S,O) characteristics. The significantly higher carrier concentration, increases light transmittance, and improves crystalline structure of the oxygen-annealed Zn(S,O) film contributes to the improved cell performance.