Investigation on antireflection coatings for Al:ZnO in silicon thin-film solar cells
Investigation on antireflection coatings for Al:ZnO in silicon thin-film solar cells
复制标题
DOI:
10.1016/j.ijleo.2012.10.012
复制
发表时间:
2013-09
期刊:
影响因子:
3.1
通讯作者:
Yuehui Lu;Xianpeng Zhang;Jinhua Huang;Jia Li;Tiefeng Wei;P. Lan;Ye Yang;Hua Xu;Weijie Song
中科院分区:
文献类型:
--
作者:
Yuehui Lu;Xianpeng Zhang;Jinhua Huang;Jia Li;Tiefeng Wei;P. Lan;Ye Yang;Hua Xu;Weijie Song
We numerically investigate the role of antireflection (AR) coatings, composed of SiO2and/or ZnO, in suppression of interfacial reflections in the presence of the transparent conducting oxide, Al-doped ZnO (AZO). Three structures are simulated: (a) AR coatings in organic light-emitting diodes (OLEDs) and flat panel displays, (b) AR coating located between the glass and the AZO, and (c) same as the case b except the involvement of another AR coating between the AZO and the amorphous silicon layers. The weighted average transmittance according to the AM1.5 solar spectrum, the photovoltaic transmittance (Tpv), suggests that there is no evident difference between the structures a and b, especially when the layer number of AR coatings is less than three. An effective way to improveTpvis presented in the structure c, whereTpvis increased from 73.54% to 76.32% with a three-layered AR coating located between AZO and a-Si. It implies that the suppression of interfacial reflections, resulting from the considerable mismatch of refractive indices at the interface of AZO and a-Si, would benefit the efficiency improvement of silicon thin-film solar cells.