Analog modulation of 1.55-μm vertical-cavity lasers
Analog modulation of 1.55-μm vertical-cavity lasers
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1.55 μm 垂直腔激光器的模拟调制
DOI：
10.1117/12.347094
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
J. Bowers
中科院分区：
文献类型：
--
作者：
J. Piprek;K. Takiguchi;A. Black;P. Abraham;A. Keating;V. Kaman;Sheng Z. Zhang;J. Bowers
分析了模拟调制下InP/GaAs熔合1.55微米垂直腔激光器的性能。我们的vcl采用应变补偿InGaAsP/InP多量子阱（MQW）有源区夹在两个AlGaAs/GaAs分布式Bragg反射器之间。p掺杂顶镜的第一层AlGaAs层被横向氧化，用于光学和电约束。这些器件表现出最低的阈值电流以及任何电泵长波VCL连续波工作的最高温度。对两种不同的装置设计进行了研究和比较。在氧化层的引导下，MQW势垒应变的减小和光学折射率的提高导致了VCL性能的提高。然而，寄生效应限制了调制带宽。采用速率方程模型对高次谐波畸变进行了测量和模拟。该模型包括非线性增益函数、增益压缩、自发发射和俄歇复合以及量子阱中载流子密度相关的吸收，从而降低了差分增益。结果表明，量子阱内的电子-光子相互作用主导了非线性畸变。该模型测量并再现了多个高阶响应峰。
We analyze the performance of InP/GaAs fused 1.55 micrometers vertical-cavity lasers (VCLs) under analog modulation. Our VCLs employ a strain-compensated InGaAsP/InP multi-quantum well (MQW) active region sandwiched between two AlGaAs/GaAs distributed Bragg reflectors. The first AlGaAs layer of the p-doped top mirror is laterally oxidized for optical and electrical confinement. These devices exhibit the lowest threshold current as well as the highest temperature of continuous-wave operation of any electrically pumped long- wavelength VCL. Two different device designs are investigated and compared. Reduction of the MQW barrier strain and enhancement of the optical index guiding by the oxide layer lead to an improvement of VCL performance. However, parasitic effects limit the modulation bandwidth. Higher order harmonic distortion is measured and simulated using a rate equation model. The model includes a non-linear gain function, gain compression, spontaneous emission and Auger recombination as well as carrier density dependent absorption in the quantum wells which reduces the differential gain. The good agreement between measurement and simulation indicates that electron-photon interaction within the quantum wells dominates the non-linear distortion. Multiple higher order response peaks are measured and reproduced by the model.